QDL Publications
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Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality
Yixuan Shen, Rui Q Yang, John D Steward, Samuel D Hawkins and Aaron J Muhowski Interband cascade lasers (ICLs) are becoming desirable mid-infrared semiconductor laser sources particularly in the 3–6 µm wavelength range due to their low power consumption. In this work, we report the demonstration of room temperature (RT) ICLs based on hybrid-cladding layers and a modified type-II quantum well…
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Continuous wave interband cascade lasers near 13 μm
Yixuan Shen, Rui Q. Yang, Samuel D. Hawkins, Aaron J. Muhowski We report the demonstration of continuous-wave interband cascade lasers (ICLs) near 13 μm. The attained lasing wavelength of 13.2 μm at 92 K stands as the longest cw emission wavelength ever reported for III-V interband lasers. This achievement is attributed to the adoption of an innovative…
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Low threshold long wavelength Interband Cascade Lasers with high voltage efficiencies
Jeremy A. Massengale, Yixuan Shen, Rui Q. Yang, Samuel D. Hawkins, Aaron J. Muhowski We report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs,…
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Pushing the Performance Limits of Long Wavelength Interband Cascade Lasers using Innovative Quantum Well Active Regions
Yixuan Shen, J. A. Massengale, Rui Q. Yang, S. D. Hawkins, A. J. Muhowski. With innovative Quantum Well active regions, these ICLs were able to operate at wavelengths near 14.4 um, the longest ever demonstrated for III–V interband cascade lasers, implying great potential of ICLs to cover an even wider wavelength range. DOI: 10.1063/5.0162500
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Enhanced Performance of InAs-based Interband Cascade Lasers Emitting between 10-13 µm
J. A. Massengale, Y. Shen, R. Q. Yang, S. D. Hawkins, and J. F. Klem, “Enhanced Performance of InAs-based Interband Cascade Lasers Emitting between 10-13 µm,” Semicond. Sci. Technol. 38, 025009 (2023) DOI: 10.1088/1361-6641/acac4e
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Low threshold InAs-based interband cascade lasers grown by MBE
K. Zhang, Y. Lin, W. Zheng, R. Q. Yang, H. Lu, Y. Chen, “Low threshold InAs-based interband cascade lasers grown by MBE”, Journal of Crystal Growth 586, 126618 (2022). DOI: 10.1016/j.jcrysgro.2022.126618
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Long Wavelength Interband Cascade Lasers
J. A. Massengale, Y. Shen, R. Q. Yang, S. D. Hawkins, and J. F. Klem, “Long Wavelength Interband Cascade Lasers”, Appl. Phys. Lett. 120, 091105 (2022). DOI: 10.1063/5.0084565
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InAs-based Interband Cascade Lasers
R. Q. Yang, L. Li, W. Huang, S.M.S. Rassel, J. A. Gupta, A. Bezinger, X. Wu, S.G. Razavipour, G. C. Aers, “InAs-based Interband Cascade Lasers” (invited), IEEE J. Selected Topics Quantum Electronics, 25, No. 6, 1200108 (2019).
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High temperature and low threshold interband cascade lasers at wavelengths longer than 6 μm
S.M.S. Rassel, L. Li, Y. Li, R. Q. Yang, J. A. Gupta, X. Wu, G. C. Aers, “High temperature and low threshold interband cascade lasers at wavelengths longer than 6 μm”, Optical Engineering, 57 (1), 011021 (2018).
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InAs-Based Single-Mode Distributed Feedback Interband Cascade Lasers
Y. Jiang, L. Li, H. Ye, R. Q. Yang, T. D. Mishima, M.B. Santos, M. B. Johnson, D. J.-Y. Feng, and F.-S. Choa, “InAs-Based Single-Mode Distributed Feedback Interband Cascade Lasers,” IEEE J. Quantum Electron. 51, 2300307 (2015).